Využití organokovových sloučenin pro depozice anorganických materiálů

Ing. Tomáš Řičica

Doctoral thesis

Abstract:

Prace byla v.novana studiu organokovych prekurzor., ktere by mohly byt vyu.ity p.edev.im pro depozice tenkych vrstev III-VI material.. Prvni .ast diserta.ni prace se zabyvala studiem mo.neho vyu.iti znamych N ?¨ Ga intramolekularn. koordinovanych chalkogenid. jako vhodnych SSP pro p.ipravu tenkych polovodi.ovych vrstvev III-VI material.. Druhym cilem teto prace byla snaha o p.ipravu monomernich N ?¨ M (M = Ga, In) intramolekularn. koordinovanych chalkogenid. a chalkogenolat. prvk. 13. skupiny. Pro tento u.el byly v teto praci vyu.ity rozdilne N,C,N- a C,N-chelatujici ligandy L1-3 (L1 je {2,6-(Me2NCH2)2C6H3}-, L2 je {2-(Et2NCH2)-4,6-tBu2-C6H2}- a L3 je {2,6-(tBuN=CH)2C6H3}-).

Abstract:

The work was focused on the study of organometallic precursors, which could be used for deposition of thin films III-VI materials. The first aim of this dissertation was to investigated known N ?¨ Ga intramolecularly coordinated chalcogenides for deposition of semiconductor thin layers of III-VI materials. The second aim of the dissertation was focused on the synthesis of new monomeric N ?¨ M (M = Ga, In) intramolecularly coordinated chalcogenides.or chalcogenolates of the 13th group elements. For this reason either N,C,N- or C,N-chelating ligands L1-3 (L1 is {2,6-(Me2NCH2)2C6H3}- L2 is {2-(Et2NCH2)-4,6-tBu2-C6H2}-and L3 is {2,6-(tBuN=CH)2C6H3}-) were used.

Keywords

13. skupina prvků, tenké vrstvy, spin coating, chalkogenidy a chalkogenoláty, redukce

Language used: Czech

Date on which the thesis was submitted / produced: 13. 6. 2019

Accessible from:: 31. 12. 2999

Thesis defence

• Supervisor: prof. Ing. Roman Jambor, Ph.D.

University of Pardubice

Faculty of Chemical Technology

Doctoral programme / field:
Inorganic Chemistry / Inorganic chemistry